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| (R) BYW81P-200 BYW81PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 VRMS Capacitance = 7 pF A K K A DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current = 0.5 BYW81P BYW81PI Tc=115C Tc=90C tp=10ms sinusoidal TO-220AC (Plastic) BYW81P-200 isolated TO-220AC (Plastic) BYW81PI-200 Parameter Value 35 15 15 200 - 40 to + 150 - 40 to + 150 Unit A A Surge non repetitive forward current Storage and junction temperature range A C C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 - Ed: 2D 1/6 BYW81P-200 / BYW81PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter BYW81P BYW81PI Value 2.0 3.5 Unit C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25C Tj = 100C VF ** Tj = 125C Tj = 125C Tj = 25C IF = 12 A IF = 25 A IF = 25 A Test Conditions VR = VRRM Min. Typ. Max. 20 1.5 0.85 1.05 1.15 Unit A mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.016 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A Min. Typ. Max. 25 Unit ns dIF/dt = -50A/s 40 tr = 10 ns 15 ns VFP Tj = 25C tr = 10 ns 2 V 2/6 BYW81P-200 / BYW81PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.05 =0.1 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 350 300 250 200 T IM(A) T IM =tp/T tp 150 100 P=10W P=20W P=30W I F(av)(A) 50 =tp/T tp 0.0 0 2.5 5 7.5 10 12.5 15 17.5 20 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 = 0 .1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj= 125 oC 0.5 T 0.2 Single pulse 0.1 1 10 100 200 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. (BYW81P) 160 150 140 130 120 110 100 90 80 70 60 50 40 IM 30 20 10 0 0.001 IM(A) Fig.6 : Non repetitive surge peak forward current versus overload duration. (BYW81PI) 120 110 100 90 80 70 60 50 40 30 IM 20 10 0 0.001 IM(A) Tc=25 o C Tc=75 o C Tc=115 o C t =0.5 Tc=25 oC Tc=60 o C Tc=90 o C t(s) 0.01 0.1 1 t =0.5 t(s) 0.01 0.1 1 3/6 BYW81P-200 / BYW81PI-200 Fig.7 : Average current temperature. (duty cycle : 0.5) (BYW81P) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IF(av)(A) Rth(j-a)=Rth(j-c) versus ambient Fig.8 : Average current temperature. (duty cycle : 0.5) (BYW81PI) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IF(av)(A) versus ambient Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W Rth(j-a)=15 o C/W =0.5 T =0.5 T =tp/T tp Tamb(o C) =tp/T tp Tamb(o C) 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) 120 F=1Mhz Tj=25 oC Fig.10 : Recovery charges versus dIF/dt. 60 50 40 30 QRR(nC) 90%CONFIDENCE 115 110 105 100 95 90 85 80 1 IF=IF(av) Tj=100 OC Tj=25 O C 20 10 VR(V) 10 30 50 70 0 1 dIF/dt(A/us) 10 20 40 60 80 Fig.11 : Peak reverse current versus dIF/dt. Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 IRM(A) 90%CONFIDENCE 1.50 1.25 Tj=100 OC IF=IF(av) 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 0.00 0 25 dIF/dt(A/us) 1 10 Tj( o C) 20 40 60 80 50 75 100 125 150 4/6 BYW81P-200 / BYW81PI-200 PACKAGE MECHANICAL DATA TO-220AC (JEDEC outline) H2 C L5 OI L6 L2 D L7 A DIMENSIONS REF. A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 L9 F1 L4 F G M E Marking : Type number Cooling method : C Weight : 1.9 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA TO-220AC (isolated) B I L b2 C DIMENSIONS REF. A a1 a2 B b1 b2 C c1 c2 e F I L l2 Millimeters Min. 14.23 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 Inches Min. 0.560 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069 F A a1 l2 a2 b1 c1 e c2 Marking : Type number Cooling method : C Weight : 2.2 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/6 BYW81P-200 / BYW81PI-200 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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